參數(shù)資料
型號: UPA1700A
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 2/8頁
文件大?。?/td> 78K
代理商: UPA1700A
2
μ
PA1700A
ELECTRICAL CHARACTERISTICS (T
A
= 25 C, all terminals are connected)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 3.5 A
18
27
m
R
DS(on)2
V
GS
= 4 V, I
D
= 3.5 A
28
50
m
Gate to Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 3.5 A
5.0
9.0
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
820
pF
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
160
pF
Turn-On Delay Time
t
d(on)
I
D
= 3.5 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
18
ns
Rise Time
t
r
98
ns
Turn-Off Delay Time
t
d(off)
57
ns
Fall Time
t
f
32
ns
Total Gate Charge
Q
G
I
D
= 7.0 A
V
DD
= 24 V
V
GS
= 10 V
20
nC
Gate to Source Charge
Q
GS
2.4
nC
Gate to Drain Charge
Q
GD
5.6
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 7.0 A, V
GS
= 0
0.79
V
Reverse Recovery Time
t
rr
I
F
= 7.0 A, V
GS
= 0
di/dt = 100 A/
μ
s
36
ns
Reverse Recovery Charge
Q
rr
35
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
t = 1 s
Duty Cycle
1 %
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
t
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
相關(guān)PDF資料
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UPA1705G Switching N-channel power MOS FET industrial use
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