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參數(shù)資料
| 型號(hào)： | UPA1523 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE |
| 中文描述： | P溝道功率MOS FET開(kāi)關(guān)工業(yè)用陣列 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 75K |
| 代理商： | UPA1523 |
μ
PA1523B
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= –60 V, V
GS
= 0
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0
10
±
μ
A
Gate Cutoff Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1.0 mA
–1.0
–2.0
V
Forward Transfer Admittance
| Y
fs
|
V
DS
= –10 V, I
D
= –1.0 A
0.8
S
Drain to Source ON-Resistance
R
DS(on)1
V
GS
= –10 V, I
D
= –1.0 A
0.5
0.8
Drain to Source ON-Resistance
R
DS(on)2
V
GS
= –4.0 V, I
D
= –1.0 A
0.8
1.3
Input Capacitance
C
iss
V
DS
= –10 V, V
GS
= 0, f = 1.0 MHz
190
pF
Output Capacitance
C
oss
115
pF
Reverse Transfer Capacitance
C
rss
43
pF
Turn-on Delay Time
t
d(on)
I
D
= –1.0 A, V
GS(on)
= –10 V,
8
ns
Rise Time
t
r
V
DD
= –30 V, R
L
= 30
53
ns
Turn-off Delay Time
t
d(off)
400
ns
Fall Time
t
f
230
ns
Total Gate Charge
Q
G
V
GS
= –10 V, I
D
= –2.0 A, V
DD
= –48 V
10
nC
Gate to Source Charge
Q
GS
1.1
nC
Gate to Drain Charge
Q
GD
3.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 2.0 A, V
GS
= 0
1.0
V
Reverse Recovery Time
t
rr
I
F
= 2.0 A, V
GS
= 0, di/dt = 50 A/
μ
s
180
ns
Reverse Recovery Charge
Q
rr
250
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1523B | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE |
| UPA1523BH | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE |
| UPA1523H | 制造商: 功能描述: 制造商:undefined 功能描述: |
| UPA1524 | 制造商:NEC 制造商全稱:NEC 功能描述:N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE |
| UPA1524H | 制造商:Renesas Electronics Corporation 功能描述: |
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