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參數資料
| 型號： | UPA1478H |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | NPN硅晶體管陣列低功率高速開關使用工業(yè)用達林頓晶體管 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 59K |
| 代理商： | UPA1478H |
μ
PA1478
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Leakage Current
I
CBO
10
μ
A
V
CB
= 20 V, I
E
= 0
Emitter Leakage Current
I
EBO
1
mA
V
EB
= 5 V, I
C
= 0
Collector to Emitter
Sustaining Voltage
V
CEO(SUS)
27
31
35
V
I
C
= 1 A,
L = 3 mH
DC Current Gain
h
FE1
*
1000
—
V
CE
= 2 V, I
C
= 0.5 A
DC Current Gain
h
FE2
*
2000
30000
—
V
CE
= 2 V, I
C
= 1 A
Collector Saturation Voltage
V
CE(sat)
*
1.5
V
I
C
= 1 A, I
B
= 1 mA
Base Saturation Voltage
V
BE(sat)
*
2
V
I
C
= 1 A, I
B
= 1 mA
Turn On Time
t
on
0.5
μ
s
Storage Time
t
stg
3
μ
s
Fall Time
t
f
1
μ
s
*
PW
≤
350
μ
s, Duty Cycle
≤
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
I
B2
V
IN
PW
PW ..
Duty Cycle
≤
2 %
V
BB
..
I
B1
I
C
T.U.T.
R
L
..
V
CC
..
Base Current
Wave Form
Collector
Current
Wave Form
I
B1
I
B2
I
C
10 %
90 %
t
on
t
stg
t
f
I
C
= 1 A
I
B1
= –I
B2
= 1 mA
V
CC
..
L
..
See test circuit
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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