參數(shù)資料
型號: UNRL216
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 1/7頁
文件大?。?/td> 130K
代理商: UNRL216
Transistors with built-in Resistor
UNRL210/211/213/214/215/216
Silicon NPN epitaxial planer type
1
Publication date: July 2001
SJH00045AED
For digital circuit
I
Features
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
I
Resistance by Part Number
Marking Symbol
UNRL210
UNRL211
UNRL213
UNRL214
UNRL215
UNRL216
(R
1
)
47 k
10 k
47 k
10 k
10 k
4.7 k
(R
2
)
10 k
47 k
47 k
P
A
B
R
M
N
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
I
C
P
T
50
V
Collector current
100
mA
Total power dissipation
*
150
mW
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
μ
A
I
CEO
I
EBO
0.5
Emitter cutoff
current
UNRL211
0.5
mA
UNRL214
0.2
UNRL213
0.1
UNRL210/215/216
0.01
Collector to base voltage
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
V
Collector to emitter voltage
V
CEO
h
FE
50
V
Forward current
transfer ratio
UNRL211
35
UNRL213/214
80
UNRL210/215/216
160
460
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
0.25
V
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*: Printed circuit board copper foil for collector portion
area: 20.0 mm
2
or more, thickness: 1.6 mm
1
2
3
4
1.00
±0.05
0
±
0
0.60
±0.05
0.020
±0.010
0.60
2
1
4
3
0
0
±
0
±
0.30
±0.03
0.05
±
0.03
1
R
2
2
3
4
R
1
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
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