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參數資料
| 型號： | UNR4115Q |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）| SPAK |
| 文件頁數： | 1/14頁 |
| 文件大?。?/td> | 221K |
| 代理商： | UNR4115Q |
1
Transistors with built-in Resistor
UNR4111/4112/4113/4114/4115/4116/4117/
4118/4119/4110/411D/411E/411F/411H/411L
(UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L)
Silicon PNP epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
New S type package, allowing supply with the radial taping.
I
Resistance by Part Number
(R
1
)
10k
22k
47k
10k
10k
4.7k
22k
0.51k
1k
47k
47k
47k
4.7k
2.2k
4.7k
(R
2
)
10k
22k
47k
47k
—
—
—
5.1k
10k
—
10k
22k
10k
10k
4.7k
G
UNR4111
G
UNR4112
G
UNR4113
G
UNR4114
G
UNR4115
G
UNR4116
G
UNR4117
G
UNR4118
G
UNR4119
G
UNR4110
G
UNR411D
G
UNR411E
G
UNR411F
G
UNR411H
G
UNR411L
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
B
C
R1
R2
E
Note) The part number
s
in the parenthesis show conventional part number.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UNR4115R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| UNR4115S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| UNR4116 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR4116(UN4116) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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