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參數(shù)資料
| 型號(hào)： | UN1231A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, M-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | UN1231A |
1
Transistors with built-in Resistor
UN1231/1231A
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
I
Features
G
High forward current transfer ratio h
FE
.
G
M type mold package.
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
I
Absolute Maximum Ratings
(Ta=25C)
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
UN1231
V
CBO
20
V
UN1231A
60
UN1231
V
CEO
20
V
UN1231A
50
Collector current
I
C
I
CP
P
T
*
T
j
T
stg
0.7
A
Peak collector current
1.5
A
Total power dissipation
1.0
W
Junction temperature
150
C
Storage temperature
–55 to +150
C
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
B
C
R1(1k
)
R2
(47k
)
E
Collector to
base voltage
Collector to
emitter voltage
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
V
EB
= 14V, I
C
= 0
1
μ
A
μ
A
10
0.5
mA
Collector to base voltage
UN1231
V
CBO
I
C
= 10
μ
A, I
E
= 0
20
V
UN1231A
60
Collector to emitter voltage
UN1231
V
CEO
I
C
= 1mA, I
B
= 0
20
V
UN1231A
50
Forward current transfer ratio
h
FE
V
CE(sat)
R
1
R
1
/R
2
V
CE
= 10V, I
C
= 150mA*
I
C
= 100mA, I
B
= 5mA*
800
2100
Collector to emitter saturation voltage
0.4
V
Input resistance
0.7
1
1.3
k
Resistance ratio
0.021
* Printed circuit board: Copper foil area of 1cm
2
or more and thickness of
1.7mm for the collector portion.
*Pulse measurement
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