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參數(shù)資料
| 型號： | UMX5601 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| 中文描述： | 100 V, SILICON, PIN DIODE |
| 封裝： | ROHS COMPLAINT, PACKAGE -2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 865K |
| 代理商： | UMX5601 |
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
RoHS COMPLAINT
Copyright
2005
Rev.B, 2006-12-20
UMX5601
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
w
M
.
DESCRIPTION
The UMX5601
TM
PIN diode series was designed to provide ultra low magnetic PIN
diodes for in bore surface coil applications associated with higher field strength (3T and
greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field
distortions) available in the industry, today. The diodes have been tested in magnetic
fields of ±7 Tesla
.
The UMX5601 PIN diodes have a magnetic moment at 7 T of 4E-8 (J/T).
The diodes are offered in a surface mount package. The SM package utilizes a
round end cap to mark the anode. The cathode is square. The fully passivated PIN
diode chip is full face metallurgically bonded to shortened high conductive pins for
lower thermal and electrical resistances. The PIN diodes feature low forward bias
resistance and high zero bias impedance. The UMX5601 PIN diodes are
characterized at 64, 128, and 300 MHz. The UMX5601SM meets RoHS requirements
per EU Directive 2002/95/EC.
IMPORTANT:
Forthemostcurrentdata,consult
MICROSEMI
’swebsite:
www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25o C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
100
100
V
RMS Reverse Voltage
Storage Temperature
V
R (RMS)
T stg
T op
75
V
oC
oC
-65 to +175
-65 to +150
Operating Temperature Non-Repetitive Peak
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
UMX5601SM
Symbol
θ
Value
2
Unit
oC/Watt
KEY FEATURE S
Ultra low magnetic construction
SOGO passivated chip
Thermally matched configuration
RoHS compliant
1
Low capacitance at 0 V bias
Low conductance at 0 V bias
Metallurgical bond
Fused-in-glass construction
Non cavity design
Available in surface mount
package.
Compatible with automatic
insertion equipment
1-
These devices are supplied with
Silver terminations. Other terminal
finishes may be available on request.
Consult factory for details.
APPLICATIONS/BENEFITS
High B Field (3T+) in bore
APPLICATIONS:
Active or semi-active
(not passive)
MR blocking circuits
MR detuning circuits
MR disable circuits
MR receiver protector circuits
U
M
X
5
6
0
1
相關PDF資料 |
PDF描述 |
|---|---|
| UMX6N | Serial real-time clock with 56 bytes NVRAM |
| UMX9989AP | DUAL ULTRA LOW MAGNETIC MOMENT FAST DIODES FOR MRI APPLICATIONS |
| UN0371C | Amplifier. Other |
| UN0371P | Amplifier. Other |
| UN0374N | Amplifier. Other |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UMX5601_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| UMX5601SM | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| UMX5N | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
| UMX5NTR | 功能描述:兩極晶體管 - BJT DUAL NPN 11V 50MA SOT-363 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| UMX-649-D16-CC | 制造商:UMC 功能描述: |
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