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參數(shù)資料
| 型號： | UMH10N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 2-WIRE FACTORY PROGRAMMED W/TIN PLATING |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 39K |
| 代理商： | UMH10N |
EMH10 / UMH10N / IMH10A
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
Supply voltage
Input voltage
Output current
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Power
dissipation
Parameter
Symbol
Limits
Unit
V
CC
50
V
V
IN
12
V
5
I
O
100
mA
I
C (Max.)
100
mA
Tstg
55~
+
150
°
C
Pd
EMH10,UMH10N
150 (TOTAL)
mW
IMH10A
300 (TOTAL)
1
2
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
I
I
V
I (off)
V
I (on)
V
O (on)
I
O (off)
R
1
G
I
R
2
/R
1
Min.
1.1
1.54
80
17
0.1
2.2
21
0.5
0.3
3.6
0.5
2.86
26
V
V
CC
=5V, I
O
=100
μ
A
V
O
=0.3V, I
O
=5mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=10mA
V
CE
=10mA, I
E
=
5mA, f=100MHz
V
mA
μ
A
k
Typ.
Max.
Unit
Conditions
f
T
250
MHz
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
Transition frequency of the device
z
Electrical characteristic curves
I
I
OUTPUT CURRENT : I
O
(A)
100
μ
200
μ
500
μ
1m
2m
5m 10m 20m
50m100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=
40
°
C
25
°
C
100
°
C
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I (off)
(V)
O
0
3.0
10m
1
μ
2m
5m
1m
200
μ
500
μ
100
μ
50
μ
20
μ
10
μ
5
μ
2
μ
0.5
1.0
1.5
2.0
2.5
V
CC
=5V
Ta=100
°
C
25
°
C
40
°
C
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
D
I
1k
500
200
100
50
20
10
5
2
1
100
μ
200
μ
500
μ
1m
2m
5m 10m 20m 50m100m
V
O
=5V
Ta=100
°
C
25
°
C
40
°
C
Fig.3 DC current gain vs. output
current
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