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參數(shù)資料
| 型號： | UMD3NTN |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | UMD3NTN |
EMD3 / UMD3N / IMD3A
Transistors
General purpose
(dual digital transistors)
Rev.A
1/3
EMD3 / UMD3N / IMD3A
z
Features
1) Both the DTA114E chip and DTC114E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
” sign on DTr
2
values for the PNP
type have been omitted.
z
Equivalent circuits
EMD3 / UMD3N
IMD3A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
R
2
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
1
R
2
=10k
R
1
=10k
R
2
=10k
R
1
=10k
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
10
V
V
IN
40
I
O
50
mA
I
C (Max.)
100
Tj
150
C
Tstg
55
～+
150
C
Pd
EMD3, UMD3N
150 (TOTAL)
mW
IMD3A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Power
dissipation
z
External dimensions
(Unit : mm)
ROHM : EMT6
EMD3
ROHM : UMT6
EIAJ : SC-88
UMD3N
Abbreviated symbol : D3
Abbreviated symbol : D3
Abbreviated symbol : D3
ROHM : SMT6
EIAJ : SC-74
IMD3A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMD3NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN/PNP 50V 50MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMD3TR | 制造商:ROHM Semiconductor 功能描述: |
| UMD4 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Packaging specifications |
| UMD4N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual digital transistors) |
| UMD4NTR | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL PNP/NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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