- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381182 > ULBM2T (ADVANCED SEMICONDUCTOR INC) NPN Silicon RF Power Transistor(Ic:0.75A,Vcbo: 36 V,Vceo: 16 V,Vces:36V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管Ic:0.75A,Vcbo: 36 V,Vceo: 16 V,Vces:36V,Vebo: 4.0 V)) PDF資料下載
參數(shù)資料
| 型號(hào)： | ULBM2T |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:0.75A,Vcbo: 36 V,Vceo: 16 V,Vces:36V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管Ic:0.75A,Vcbo: 36 V,Vceo: 16 V,Vces:36V,Vebo: 4.0 V)) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | ULBM2T |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 25 mA
BV
CES
I
C
= 5 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CE
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
20
UNITS
V
V
V
mA
---
1.0
C
ob
V
CB
= 12 V
f = 1.0 MHz
10
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 2.0 W f = 470 MHz
6.0
55
dB
%
NPN SILICON RF POWER TRANSISTOR
ULBM2T
DESCRIPTION:
The
ASI ULBM2T
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
0.75 A
V
CB0
36 V
V
CEO
16 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
5 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
35
O
C/W
PACKAGE STYLE TO-39
ORDER CODE: ASI10676
A
D
45°
C
B
F
E
G
H
MINIMUM
inches / mm
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.200 / 5.080
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
.045 / 1.140
.500 / 12.700
.016 / 0.407
.020 / 0.508
DIM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ULBM2 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| ULBM2SL | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| ULBM2TE | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| ULBM45 | NPN Silicon RF Power Transistor(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)) |
| ULBM5SL | NPN Silicon RF Power Transistor(Ic:1.7 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:1.7 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ULBM2T_07 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ULBM2TE | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ULBM2TE_07 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ULBM35 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ULBM35_07 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。