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參數(shù)資料
| 型號(hào)： | UL62H256BS1K35 |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 35 ns, PDSO28 |
| 封裝： | 0.330 INCH, SOP-28 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 82K |
| 代理商： | UL62H256BS1K35 |
2
September 26, 2002
UL62H256B
Operating Mode
E
W
G
DQ0 - DQ7
Standby/not selected
H
*
*
High-Z
Internal Read
L
H
H
High-Z
Read
L
H
L
Data Outputs Low-Z
Write
L
L
*
Data Inputs High-Z
Truth Table
Block Diagram
Maximum Ratings
a
Symbol
Min.
Max.
Unit
Power Supply Voltage
V
CC
-0.3
4
V
Input Voltage
V
I
-0.3
V
CC
+ 0.3
b
V
CC
+ 0.3
b
V
Output Voltage
V
O
-0.3
V
Power Dissipation
P
D
-
1
W
Operating Temperature
K-Type
A-Type
T
a
-40
-40
85
125
°
C
Storage Temperature
T
stg
-65
150
°
C
Output Short-Circuit Current
at V
CC
= 2.5 V and V
O
= 0 V
c
| I
OS
|
100
mA
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 2.2 V. The timing reference level of all input and output signals is 1.1 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured ±200 mV from steady-state voltage.
a
Stresses greater than those listed under Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating
only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability
b
Maximum voltage is 4 V
c
Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s.
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
CC
V
SS
W
G
E
R
I
C
I
Address
Change
Detector
C
R
Sense Amplifier/
Write Control Logic
Clock
Generator
C
Memory Cell
Array
512 Rows x
64 x 8 Columns
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
*H or L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UL631H256 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C35G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
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