參數(shù)資料
型號: UH2C-E3/52T
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁數(shù): 2/5頁
文件大小: 103K
代理商: UH2C-E3/52T
New Product
UH2B, UH2C & UH2D
Vishay General Semiconductor
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
,
PDD-Asia@vishay.com
,
PDD-Europe@vishay.com
Document Number: 89108
Revision: 03-Jun-09
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
Note:
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
θ
JA
- junction to ambient, R
θ
JM
- junction to mount
Note:
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage
(1)
I
F
= 1.0 A
I
F
= 2.0 A
T
A
= 25 °C
V
F
0.79
0.87
-
1.05
V
I
F
= 1.0 A
I
F
= 2.0 A
T
A
= 125 °C
0.62
0.69
-
0.90
Reverse current
(2)
Rated V
R
T
A
= 25 °C
T
A
= 125 °C
I
R
-
10
2.0
50
μA
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
l
rr
= 0.25 A
T
A
= 25 °C
t
rr
15
25
ns
Typical reverse recovery time
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, l
rr
= 0.1 I
RM
20
35
Typical softness factor (t
b
/t
a
)
I
F
= 2.0 A, dI/dt = 200 A/μs,
V
R
= 200 V
T
A
= 125 °C
S
0.3
-
Typical reverse recovery current
I
RM
5.0
6.0
A
Typical stored charge
Q
rr
55
-
nC
Typical junction capacitance
4.0 V, 1 MHz
C
J
42
-
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH2B
UH2C
UH2D
UNIT
Typical thermal resistance
(1)
R
θ
JA
R
θ
JM
105
15
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
UH2D-E3/52T
0.100
52T
750
7" diameter plastic tape and reel
UH2D-E3/5BT
UH2DHE3/52T
(1)
UH2DHE3/5BT
(1)
0.100
5BT
3200
13" diameter plastic tape and reel
0.100
52T
750
7" diameter plastic tape and reel
0.100
5BT
3200
13" diameter plastic tape and reel
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