參數資料
型號: UGQ5140K
廠商: Allegro MicroSystems, Inc.
英文描述: Protected POWERHALL Sensor(保護型PowerHall傳感器(霍爾效應開關))
中文描述: 保護POWERHALL傳感器(保護型PowerHall傳感器(霍爾效應開關))
文件頁數: 4/8頁
文件大小: 75K
代理商: UGQ5140K
5140
PROTECTED P
OWER
H
ALL
SENSOR:
LAMP/SOLENOID DRIVER
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
TYPICAL TRANSFER CHARACTERISTICS
at T
A
= +25
°
C
100
125
150
175
200
3.0
0
O
MAGNETIC FLUX DENSITY IN GAUSS
12
9.0
6.0
75
Dwg. GH-007
50
25
0
15
I = 300 mA
B
OP
B
RP
V
OUT(SAT)
V
B B
CIRCUIT DESCRIPTION AND OP-
ERATION
The UGQ5140K merges state-of-the-art
Hall effect sensing and power driving tech-
nologies to allow precision non-contact
actuation of incandescent lamps or inductive
loads. It is rated for operation over an
extended temperature range as typically
required in automotive applications.
MAGNETIC OPERATION
As shown in the Transfer Characteristics
graph, the output of the device (pin 2)
switches low when the magnetic field at the
Hall sensor exceeds the operate point
threshold (B
OP
). At this point, the output
voltage is V
OUT(SAT)
. When the magnetic field
is reduced to below the release point thresh-
old (B
RP
), the device output goes high. The
difference in the magnetic operate and
release points is called the hysteresis (B
H
) of
the part. This built-in hysteresis allows clean
switching of the output even in the presence
of external mechanical vibration and electri-
cal noise.
CURRENT AND THERMAL
LIMITING
Output short circuits may be caused by
faulty connectors, crimped wiring harnesses,
or blown loads. In such cases, current and
thermal limit circuitry will protect the output
transistor against destruction.
Current through the output transistor is
sensed with a low-value on-chip aluminum
resistor. The voltage drop across this
resistor is fed back to control the base drive
of the output stage. This feedback prevents
the output transistor from exceeding its
maximum current density rating by limiting
the output current to approximately 900 mA.
It may also cause the output voltage to
increase (V
OUT
= V
BB
- [I
LIMIT
x R
L
]). In this
mode, the device will dissipate an increased
amount of power (P
D
= V
OUT
x I
LIMIT
) and the
output transistor will be thermally stressed.
相關PDF資料
PDF描述
UGS3113LL HALL-EFFECT SWITCHES
UGS3113LT HALL-EFFECT SWITCHES
UGS3113U HALL-EFFECT SWITCHES
UGS3113UA HALL-EFFECT SWITCHES
UGS3140LL HALL-EFFECT SWITCHES
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