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參數(shù)資料
| 型號(hào)： | UFT5-28SL |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF POWER MOSFET N-Channel Enhancement Mode |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 19K |
| 代理商： | UFT5-28SL |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
(BR)DSS
I
DS
= 5 mA V
GS
= 0 V
I
DSS
V
DS
= 28 V V
GS
= 0 V
I
GSS
V
GS
= 20 V V
DS
= 0 V
G
FS
V
GS
= 10 V I
D
= 250 mA
V
GS(TH)
V
DS
= 10 V I
D
= 10 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
.110
1.0
UNITS
V
mA
μ
A
mS
V
0.8
1.0
6.0
C
ISS
C
OSS
C
RSS
V
DS
= 0 V V
GS
= 0 V f = 1.0 MHz
8.0
6.5
5.5
pF
P
G
η
D
V
DD
= 28 V I
DQ
= 50 mA P
OUT
= 4 W
f = 400 MHz
14
50
16
55
dB
%
UHF POWER MOSFET
N-Channel Enhancement Mode
UFT5-28SL
DESCRIPTION:
The
UFT5-28SL
is Designed for is
Designed for AM/FM Power Amplifier
Applications up to 500 MHz.
FEATURES:
P
OUT
= 5.0 W Typical at 400 MHz
η
D
= 55% Typical at 5 W / 400 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
1.25 A
V
DSS
60 V
V
DGR
60 V
V
GS
±
40 V
P
DISS
17.5 W @ T
C
= 25
O
C
-65
O
C to +150
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
10
O
C/W
PACKAGE STYLE .280 4L PILL
ORDER CODE: ASI10664
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
inches / mm
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
D
S
S
G
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