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參數(shù)資料
| 型號(hào)： | UFT150-28 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD-EFFECT TRANSISTOR |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 0.400 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 41K |
| 代理商： | UFT150-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
(BR)DSS
I
D
= 50 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
=100 mA
V
DS(on)
I
D
= 5.0 A
g
fs
I
D
= 2.5 A
C
iss
C
oss
C
rss
G
ps
η
ψ
NONE
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
mA
μ
A
V
V
mhos
2.5
1.0
1.0
2.0
3.0
3.0
180
200
20
6.0
1.5
V
DS
= 28 V
V
GS
= 0 V f = 1.0 MHz
pF
V
DD
= 28 V
f = 225 MHz
I
DQ
= 2 X 100 mA P
OUT
= 200 W
12
55
10:1
14
65
---
dB
%
---
RF POWER FIELD-EFFECT TRANSISTOR
UFT150-28
DESCRIPTION:
The
ASI UFT150-28
is a N-Channel
Enhancement-Mode Push Pull
MOSFET, Designed for FM, and TV
Solid State Transmitter Applications up
to 500 MHz.
MAXIMUM RATINGS
I
D
26 A
V
DSS
65 V
P
DISS
400 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
0.44
O
C/W
PACKAGE STYLE .400 BAL FLG
1 = DRAIN 2 = DRAIN(2) 3 = GATE(1)
4 = GATE(2) 5 = SOURCE (1&2) -CASE
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