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參數資料
| 型號： | UBD850 |
| 廠商： | Clare, Inc. |
| 英文描述： | HIGH-SPEED TRANSIENT SURGE PROTECTORS |
| 中文描述： | 高速瞬態(tài)浪涌保護器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 92K |
| 代理商： | UBD850 |
561
DESCRIPTION
www.cpclare.com
HIGH-SPEED TRANSIENT SURGE PROTECTORS
UNI-IMPS
STANDARD VOLTAGES
APPLICATIONS
FEATURES
energy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary
semiconductor junction process that results in nanosecond response times combined with peak current ratings in
excess of 20kA. A unique benefit of this technology is that the breakdown voltage is virtually independent of the
rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on high-
frequency lines and antenna feeds without excessive loading.
I
Fast impulse breakdown (
≤
120% of typical DC
breakdown to 200kV/
μ
s)
I
Tight DC breakdown voltage tolerance (
±
10%)
I
Non-radioactive
I
Low capacitance
I
Antenna feedlines
I
Test equipment
I
Video displays
I
Medical electronics
I
Instrumentation circuits
Series
DC Breakdown
Voltage (typ)
550
600
650
750
850
1.0
1.2
1.5
2.0
2.5
3.0
4.0
4.0
5.0
6.0
7.5
10.0
12.0
15.0
20.0
Unit
UBD
V
V
V
V
V
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
UBT
and
UGT
(See detailed specifications for more information.)
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