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參數(shù)資料
| 型號(hào)： | UBA1710M |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | Modulator for GaAs power amplifiers(應(yīng)用于GaAs功率放大器的調(diào)節(jié)器) |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO20 |
| 封裝： | 4.4MM, PLASTIC, SOT-266, SSOP-20 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | UBA1710M |
1997 Oct 17
3
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGG536
VOLTAGE TRIPLER
CLOCK
NEGATIVE DC-DC
CONVERTER
POWER
MANAGEMENT
POWER MOS 1
POWER MOS 2
6
8
9
10
11
20
2
1
3
16
15
14
13
18
17
4
7
5
12
19
TC1NTC1PTC2N
NC3N
VN
TC2P
NC3P
VP
STB
Rext
D1B
D1A
S1B
S1A
D2
S2
VCC
VDD
GND
BUFI
UBA1710M
BUFFER
PINNING
SYMBOL
PIN
DESCRIPTION
NC3
P
NC3
N
V
N
V
CC
GND
TC1
N
V
DD
TC1
P
TC2
N
TC2
P
V
P
BUFI
S1A
S1B
D1A
D1B
S2
D2
R
ext
STB
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
charge pump tank capacitor
charge pump tank capacitor
negative bias voltage
analog supply voltage
ground
charge pump tank capacitor
digital supply voltage
charge pump tank capacitor
charge pump tank capacitor
charge pump tank capacitor
positive tripler voltage
buffer input
power MOS 1 source A
power MOS 1 source B
power MOS 1 drain A
power MOS 1 drain B
power MOS 2 source
power MOS 2 drain
external resistance for V
N
standby input (active HIGH)
Fig.2 Pin configuration.
handbook, halfpage
NC3P
NC3N
VN
VCC
GND
TC1N
VDD
TC1P
TC2N
TC2P
STB
Rext
D2
S2
D1A
S1B
D1B
S1A
BUFI
VP
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
UBA1710M
MGG535
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