
2000 Feb 15
8
Philips Semiconductors
Product specification
DECT receiver
UAA3540TS
Notes
1.
2.
Measured on the Philips Semiconductors characterisation board at the RF balun input.
Measured on the Philips Semiconductors characterisation board at the LO balun input.
Bl
farlow
rejection of a blocking signal in the range:
25 MHz < f <f
(RF)(min)
300 MHz
unwanted CW level
referred to wanted at
83 dBm in channel 5 for
BER < 10
3
; note 1
unwanted CW level
referred to wanted at
83 dBm in channel 5 for
BER < 10
3
; note 1;
except 3 occurrences at
F
G1
, F
G2
and F
G3
as
defined in TBR6
unwanted CW level
referred to wanted at
83 dBm in channel 5 for
BER < 10
3
; note 1
37
58
dBc
Bl
farhigh
rejection of a blocking signal in the range:
f
(RF)(max)
+ 300 MHz < f < 4.32 GHz
47
58
dBc
BF
G1
rejection of a blocking signal in occurrence
around: F
G1
= 2835.648 MHz
37
45
dBc
BF
G2
rejection of a blocking signal in occurrence
around: F
G1
= 3150.144 MHz
rejection of a blocking signal in occurrence
around: F
G1
= 3779.136 MHz
Receive section
37
49
dBc
BF
G3
20
30
dBc
R
i(RF)
RF input resistance (real part of the parallel
input impedance)
RF input capacitance (imaginary part of the
parallel input impedance)
maximum RF input frequency
minimum RF input frequency
return loss on matched RF input
balanced; at 1890 MHz
70
C
i(RF)
0.8
pF
f
(RF)(max)
f
(RF)(min)
RL
i(RF)(m)
Local oscillator section
1880
11
15
1930
MHz
MHz
dB
balanced; note 1
R
i(lo)
LO input resistance (real part of the parallel
input impedance)
LO input capacitance (imaginary part of the
parallel input impedance)
return loss on matched LO input
LO input power level
balanced; at 1890 MHz
140
C
i(lo)
0.3
pF
RL
i(lo)
P
i(lo)
Demodulator section
balanced; note 2
9
12
15
dB
dBm
G
dem
demodulator gain
1.5
V/MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT