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參數(shù)資料
| 型號： | UAA3535HL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Low power GSM/DCS/PCS multi-band transceiver |
| 中文描述： | TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQFP48 |
| 封裝： | PLASTIC, LQFP-48 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 118K |
| 代理商： | UAA3535HL |
2000 Feb 17
15
Philips Semiconductors
Objective specification
Low power GSM/DCS/PCS multi-band transceiver
UAA3535HL
R
i
C
i
P
i
s
11
F
CP1
SPUR
P(RFin)
input resistance
input capacitance
input power
input reflection coefficient
noise figure
1 dB input compression point T
amb
= 25
°
C
power level of spurious
signals at RF input
single-ended
single-ended
23
50
20
10
10
20
50
17
45
45
pF
dBm
dB
dB
dBm
dBm
dBm
T
amb
= 25
°
C
LO leakage
other
P
HASE DETECTOR
;
PIN
TXCPO
I
CP(max)
charge pump maximum sink
or source current
GSM mode; external
resistance of 1800
1%
for minimum output
current; TXI = 0; note 6
DCS and PCS mode;
external resistance of
1800
1% for minimum
output current; TXI = 1;
note 6
for I
CP
= 1 mA
1
2
4
mA
0.5
1
2
mA
K
Φ
phase-frequency detector
gain
phase-frequency detector
gain variation
output voltage
output resistance
0.16
mA/rad
K
Φ
over output voltage range
10
%
V
o
R
o
0.4
10
CC(CP)
0.4
V
k
R
o(pd)
output resistance power
down
local oscillator feedthrough
third-order products level
TX mode disabled
1
k
LO
o
IM3
o
note 7
offset +3
×
67.7 kHz or
3
×
67.7 kHz; note 7
f
IFLO
67.7 kHz; note 7
f = 400 kHz;
T
amb
= 25
°
C; note 7
f = 1.8 MHz;
T
amb
= 25
°
C; note 7
f = 20 MHz; T
amb
= 25
°
C
f
mod
= 67.7 kHz;
notes 7 and 8
f
mod
= 67.7 kHz; note 7
40
55
32
50
dBc
dBc
IM
o
Φ
NOISE
image level
phase noise output power
density
45
37
117
dBc
dBc/Hz
117
dBc/Hz
136
50
dBc/Hz
dBc
SPUR
L(4fm)
level of spurious signals at
4
×
f
mod
level of spurious signals at
8
×
f
mod
SPUR
L(8fm)
55
dBc
RF LO buffer
RF
SOURCE CONNECTED AT PIN
RFLOIA
AND
RFLOIB
f
i(RF)
RF input frequency
1788
2002
MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
o
V
2
----------------------
=
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