參數(shù)資料
型號: U429B-FP
英文描述: Driver For IR Transmitter Diodes (Current Sink)
中文描述: 驅(qū)動紅外發(fā)射二極管(電流水槽)
文件頁數(shù): 2/4頁
文件大小: 64K
代理商: U429B-FP
U429B-FP
TELEFUNKEN Semiconductors
Rev. A1, 27-Feb-96
2 (4)
Absolute Maximum Ratings
Reference point Pin 1
Parameters
Symbol
+V
S1, S2
V
I
V
O
I
C
P
tot
T
j
T
amb
T
stg
Value
14
14
14
25
150
125
–40 to +85
–40 to +125
Unit
V
V
V
mA
mW
°
C
°
C
°
C
Supply voltage
Input voltage
Output voltage
Collector current
Power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Pins 5 and 8
Pins 3 and 4
Pins 2, 6 and 7
Pin 2
T
amb
= 80
°
C
Thermal Resistance
Parameters
Symbol
R
thJA
Volue
160
Unit
K/W
Junction ambient
Electrical Characteristics
V
S1
= V
S2
= 9 V, T
amb
= 80
°
C, reference point Pin 1, unless otherwise specified
Parameters
Test Conditions / Pin
Symbol
V
S1
V
S2
Min.
2.8
2
Typ.
Max.
13.2
13.2
Unit
V
V
Supply voltage range
Pin 5
Pin 8
Battery voltage control
Switching threshold
Regulated pulse output current
IR–signal, V
7
= 7 V
Undervoltage indicator
V
6
= 4 V, @ V
S1
= V
S2
= 4.5 V
IR–signal
V
7
= 3 V, @ V
S1
= V
S2
= 5 V
Undervoltage indicator
V
6
= 3 V, @ V
S1
= V
S2
= 4.5 V
Collector saturation voltage
IR–signal i
7
= 200 mA
Undervoltage indicator
i
6
= 60 mA, V
S1
= V
S2
= 4.5 V
Switching transistor
I
2
= 10 mA, V
3
= 4 V
I
2
= 20 mA, V
3
= 7 V
U429B–FP
Pin 5
V
S1
6.35
6.7
7.15
V
Pin 7
I
O
240
320
400
mA
Pin 6
I
O
71
100
125
mA
Pin 7
I
O
192
250
328
mA
Pin 6
I
O
71
95
118
mA
Pin 7
V
O
0.8
V
Pin 6
V
O
0.8
V
Pin 2
Pin 2
V
O
V
O
100
500
mV
mV
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