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參數(shù)資料
| 型號(hào)： | U30D60C |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 30A GLASS PASSIVATED DUAL SUPEFAST RECTIFIER |
| 中文描述： | 30A條玻璃鈍化整流雙SUPEFAST |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 63K |
| 代理商： | U30D60C |
U30D05C – U30D60C
1 of 4 2006 Won-Top Electronics
Pb
U30D05C – U30D60C
30A GLASS PASSIVATED DUAL SUPEFAST RECTIFIER
Features
!
Glass Passivated Die Construction H
!
Super-Fast Switching
!
Low Forward Voltage Drop
!
Low Reverse Leakage Current S J
!
High Surge Current Capability
!
Plastic Material has UL Flammability R K
Classification 94V-O
PIN1 2 3
L P
Mechanical Data
N
!
Case: TO-3P, Molded Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-750, Method 2026 A
!
Polarity: See Diagram B
!
Weight: 5.6 grams (approx.)
!
Mounting Position: Any
!
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. C
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 - +
G
D
PIN 3 - Case, PIN 2
E
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
U30D
05C
U30D
10C
U30D
15C
U30D
20C
U30D
30C
U30D
40C
U30D
50C
U30D
60C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
150
200
300
400
500
600
V
RMS Reverse Voltage
V
R(RMS)
35
70
105
140
210
280
350
420
V
Average Rectified Output Current @T
C
= 100°C
I
O
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
300
A
Forward Voltage @I
F
= 15A
V
FM
0.975
1.3
1.7
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
10
500
μA
Reverse Recovery Time (Note 1)
t
rr
35
50
nS
Typical Junction Capacitance (Note 2)
C
j
150
1
0
0
pF
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
TO-3P
Min
3.20
4.70
—
19.00
2.80
0.45
—
1.70
3.15
—
5.25
1.10
—
11.70
5.00
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
R
S
Max
3.50
5.30
23.00
—
3.20
0.85
16.20
2.70
3.65
4.50
5.65
1.40
2.50
12.70
6.00
All Dimensions in mm
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