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參數(shù)資料
| 型號： | U1DL49 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE |
| 中文描述： | 東芝高速整流二極管（華大）結(jié)型硅外延 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 122K |
| 代理商： | U1DL49 |
U1DL49
2001-07-11
1
CODE
TYPE
RD
U1DL49
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
U1DL49
SWITCHING MODE POWER SUPPLY APPLICATIONS
Repetitive Peak Reverse Voltage : V
RRM
= 200V
Average Forward Current
Very Fast Reverse
Recovery Time t
rr
= 60ns (Max)
Low Forward Voltage
Available to Reduce Switching Losses and Output Noise
MAXIMUM RATINGS
(Ta = 25°C)
: I
F (AV)
= 1.0A
: V
FM
= 0.98V (Max)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
200
V
Average Forward Current
I
F (AV)
1.0
A
15 (50Hz)
Peak One Cycle Surge Forward
Current (Non
Repetitive)
I
FSM
16.5 (60Hz)
A
Junction Temperature
T
j
40~150
°C
Storage Temperature Range
T
stg
40~150
°C
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
V
FM
I
FM
= 1.0A
―
―
0.98
V
Repetitive Peak Reverse Current
I
RRM
V
RRM
= 200V
―
―
10
μA
Reverse Recovery Time
(Note 1)
t
rr
I
F
= 1A, di / dt =
20A / μs
―
―
60
ns
Forward Recovery Time
(Note 2)
t
fr
I
F
= 1.0A
―
―
100
ns
Thermal Resistance
R
th (j
a)
Junction to Ambient
―
―
125
°C / W
Note 1: t
rr
TEST CIRCUIT
Note 2: t
fr
TEST CIRCUIT
MARKING
WAVEFORM
WAVEFORM
JEDEC
JEITA
TOSHIBA
Weight: 0.05g
―
―
3
5E1A
Unit: mm
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