參數(shù)資料
型號: TZS4712
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Epitaxial Planar Z-Diodes
中文描述: 硅外延平面的Z -二極管
文件頁數(shù): 3/6頁
文件大?。?/td> 79K
代理商: TZS4712
TZS4678...TZS4717
Vishay Telefunken
Rev. 2, 01-Apr-99
3 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85613
1.) Toleranzing and voltage designation (V
Z
).
The type numbers shown have a standard tolerance of
±
5% on the nominal zener voltage.
2.) Maximum zener current ratings (I
ZM
).
Maximum zener current ratings are based on maximum zener voltage of the individual units.
3.) Reverse leakage current (I
R
).
Reverse leakage currents are guaranteed and measured at V
R
as shown on the table.
4.) Maximum voltage change ( V
Z
).
Voltage change is equal to the difference between V
Z
at 100 A and V
Z
at 10 A.
Characteristics
(T
j
= 25 C unless otherwise specified)
0
40
80
120
160
0
100
300
400
500
600
P
t
T
amb
– Ambient Temperature (
°
C )
200
95 9602
200
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
1
10
100
1000
V
Z
V
Z
– Z-Voltage ( V )
25
95 9598
I
Z
=5mA
T
j
=25
°
C
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25 C
–60
0
T
j
– Junction Temperature (
°
C )
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Z
240
95 9599
V
Ztn
=V
Zt
/V
Z
(25
°
C)
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
–4
10
–4
/K
4
2
10
–4
/K
10
–4
/K
–2
10
–4
/K
0
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
T
0
10
20
30
–5
0
5
10
15
V
V
Z
– Z-Voltage ( V )
50
95 9600
40
Z
I
Z
=5mA
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
相關(guān)PDF資料
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TZS4713 Silicon Epitaxial Planar Z-Diodes
TZS4714 Silicon Epitaxial Planar Z-Diodes
TZS4715 Silicon Epitaxial Planar Z-Diodes
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TZS4717 Silicon Epitaxial Planar Z-Diodes
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