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參數(shù)資料
| 型號： | TZS4691 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon Epitaxial Planar Z-Diodes |
| 中文描述： | 硅外延平面的Z -二極管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 79K |
| 代理商： | TZS4691 |
TZS4678...TZS4717
Vishay Telefunken
Rev. 2, 01-Apr-99
3 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85613
1.) Toleranzing and voltage designation (V
Z
).
The type numbers shown have a standard tolerance of
±
5% on the nominal zener voltage.
2.) Maximum zener current ratings (I
ZM
).
Maximum zener current ratings are based on maximum zener voltage of the individual units.
3.) Reverse leakage current (I
R
).
Reverse leakage currents are guaranteed and measured at V
R
as shown on the table.
4.) Maximum voltage change ( V
Z
).
Voltage change is equal to the difference between V
Z
at 100 A and V
Z
at 10 A.
Characteristics
(T
j
= 25 C unless otherwise specified)
0
40
80
120
160
0
100
300
400
500
600
P
t
T
amb
– Ambient Temperature (
°
C )
200
95 9602
200
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
1
10
100
1000
V
Z
V
Z
– Z-Voltage ( V )
25
95 9598
I
Z
=5mA
T
j
=25
°
C
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25 C
–60
0
T
j
– Junction Temperature (
°
C )
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Z
240
95 9599
V
Ztn
=V
Zt
/V
Z
(25
°
C)
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
–4
10
–4
/K
4
2
10
–4
/K
10
–4
/K
–2
10
–4
/K
0
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
T
0
10
20
30
–5
0
5
10
15
V
V
Z
– Z-Voltage ( V )
50
95 9600
40
Z
–
I
Z
=5mA
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
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| TZS4692 | Silicon Epitaxial Planar Z-Diodes |
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| TZS4697 | Silicon Epitaxial Planar Z-Diodes |
| TZS4700 | Silicon Epitaxial Planar Z-Diodes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TZS4691-GS08 | 功能描述:穩(wěn)壓二極管 6.2 Volt 0.5W 5% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| TZS4692 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Epitaxial Planar Z-Diodes |
| TZS4692GS08 | 制造商:TEMIC 功能描述:6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| TZS4692-GS08 | 功能描述:穩(wěn)壓二極管 6.8 Volt 0.5W 5% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| TZS4693 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Epitaxial Planar Z-Diodes |
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