參數(shù)資料
型號(hào): TZA3004
廠商: NXP Semiconductors N.V.
英文描述: SDH/SONET STM1/OC3 and STM4/OC12 transceiver
中文描述: SDH / SONET的STM1/OC3和STM4/OC12收發(fā)器
文件頁(yè)數(shù): 14/28頁(yè)
文件大?。?/td> 127K
代理商: TZA3004
2000 Feb 17
14
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 and STM4/OC12
transceiver
TZA3005H
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take
normal precautions appropriate to handling MOS devices (see “Handling MOS devices”).
THERMAL CHARACTERISTICS
Notes
1.
2.
For applications with T
amb
>75
°
C, it is advised that the board layout is designed to allow optimum heat transer.
R
th(j-a)
is determined with the IC soldered on a standard single-sided 57
×
57
×
1.6 mm FR4 epoxy PCB with 35
μ
m
thick copper tracks. The measurements are performed in still air. This value will vary depending on the number of
board layers, copper sheet thickness and area, and the proximity of surrounding components.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
V
n
supply voltage
voltage
on any input pin
between two differential PECL input pins
on SDPECL input pin
current
into any TTL output pin
into any PECL output pin
total power dissipation
storage temperature
junction temperature under bias
case temperature under bias
0.5
+6
V
0.5
2
V
CC
3
V
CC
+ 0.5
+2
V
CC
+ 0.5
V
V
V
I
I(n)
8
50
65
55
55
+8
+1.5
1.5
+150
+125
+100
mA
mA
W
°
C
°
C
°
C
P
tot
T
stg
T
j(bias)
T
case(bias)
SYMBOL
PARAMETER
VALUE
40
40
55
UNIT
T
amb
T
j
R
th(j-a)
ambient temperature; note 1
junction temperature
thermal resistance from junction to ambient; note 2
+85
+125
K/W
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