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參數(shù)資料
| 型號(hào)： | TZA1000 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 光電元器件 |
| 英文描述： | QIC read-write amplifier(QIC讀寫(xiě)放大器) |
| 中文描述： | 1 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, MS-013AD, SOT137-1, SOP-24 |
| 文件頁(yè)數(shù)： | 16/24頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | TZA1000 |
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1998 Mar 17
16
Philips Semiconductors
Preliminary specification
QIC read-write amplifier
TZA1000
Notes
1.
2.
3.
4.
5.
G is a 4-bit number contained in control bits G0 to G3 (see Table 12).
6 dB step via a fixed setting, and 16 dB (in 1 dB steps) via AGC control.
S is a 7-bit number contained in control bits S0 to S6 (see Table 15).
The TZA1000 is guaranteed to operate reliably with sense currents of up to 33 mA.
The operational clock frequency (pin 15) must be >16 times higher the SCLK frequency to ensure reliable serial
transfer.
6.
W is a 7-bit number contained in control bits W0 to W6 (see Table 14). A more accurate calculation of the write
current would be given by: I
c
= I
t
0.003
×
I
t2
, where I
t
= 125 (W + 1) / 128, I
t
the target current and I
c
the
write current.
The TZA1000 is guaranteed to supply a write current of up to 60 mA.
10 to 90% of a total current reversal.
Difference between negative-to-positive and positive-to-negative current slopes.
7.
8.
9.
V
hys(AGC)
hysteresis in AGC detection
level
AGC bandwidth
operational clock
65
75
85
mV
B
AGC
f
clk
0
1.5
24
24
MHz
MHz
note 5
Write section
I
write
write current
R
head
= 10
;
R
ref
= 430
;
0-peak; W = 32; note 6
R
head
= 10
; note 7
I
write
= 30 mA;
27.3
28.8
30.3
mA
I
write(max)
I
write
maximum write current
difference between positive
and negative write currents
write current transition time
resistive load
head load
60
80
0
5
mA
%
t
t(iwrite)(Rload)
note 8
resistive load, 10
R
head
= 10
;
L
head
= 200 nH
4
6
12
ns
ns
V
o(p-p)(1,3)
output voltage swing
(peak-to-peak value)
read to write time
write to read time
WD pulse asymmetry
WDI pulse time HIGH
WDI pulse time LOW
WUS detection
resistance level
3
V
t
R-W
t
W-R
t
WD
t
WDIH
t
WDIL
R
det(WUS)
5
5
0.2
10
0
1
10
μ
s
μ
s
ns
ns
ns
in WDI mode; note 9
short circuited to V
DD
or
V
SS
; I
write
= 30 mA
open; I
write
= 30 mA
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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