參數(shù)資料
型號： TZ150N26KOF
英文描述： High junction temperature Transil
中文描述： 晶閘管模塊|可控硅| 2.6KV五（無線資源管理）| 223A我（翻譯）
文件頁數(shù)： 1/12頁
文件大?。?/td> 394K
代理商： TZ150N26KOF
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TZ150N
BIP AC / Warstein,den 19.09.85 Tscharn
A513E23
1/12
Seite/page
Kenndaten
Elektrische Eigenschaften
TZ150N
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Tvj = -40°C... Tvj max
VDRM,VRRM 2000
2400
2200
2600
V
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDSM
2000
2400
2200
2600
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
2100
2500
2300
2700
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
ITRMSM
350 A
Dauergrenzstrom
average on-state current
TC = 85°C
TC = 54°C
ITAVM
150
223
A
Stostrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
ITSM
4500
4000
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
101000
80000
As
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/s
(diT/dt)cr
60 A/s
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6
th letter C
6.Kennbuchstabe / 6
th letter F
(dvD/dt)cr
500
1000
V/s
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
Tvj = Tvj max , iT = 600 A
vT
max.
2,6 V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
1,2 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
2,3 m
Zündstrom
gate trigger current
Tvj = 25°C, vD = 6 V
IGT
max.
200 mA
Zündspannung
gate trigger voltage
Tvj = 25°C, vD = 6 V
VGT
max.
2V
Nicht zündender Steuerstrom
gate non-trigger current
Tvj = Tvj max , vD = 6 V
Tvj = Tvj max , vD = 0,5 VDRM
IGD
max.
10
5
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
Tvj = Tvj max , vD = 0,5 VDRM
VGD
max.
0,2 V
Haltestrom
holding current
Tvj = 25°C, vD = 6 V, RA = 5
IH
max.
300 mA
Einraststrom
latching current
Tvj = 25°C, vD = 6 V, RGK ≥ 10
iGM = 1 A, diG/dt = 1 A/s, tg = 20 s
IL
max.
1200 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
max.
50 mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/s
tgd
max.
4 s
prepared by: C.Drilling
date of publication:
10.07.02
approved by: J. Novotny
revision:
2
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