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參數(shù)資料
| 型號(hào)： | TXN812 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
| 中文描述： | 高浪涌能力高通態(tài)電流高穩(wěn)定性和可靠性 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | TXN812 |
Fig.9 :
versus number of cycles.
Non repetitive surge peak on-state current
Fig.10 :
Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2t.
Fig.8 :
Relative variation of gate trigger current versus
junction temperature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7 :
Relative variation of thermal impedance versus
pulse duration.
Fig.11 :
On-state characteristics (maximum values).
TXN/TYN 0512 ---> TXN/TYN 1012
4/5
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