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參數(shù)資料
| 型號： | TXC102 |
| 廠商： | RF Monolithics, Inc. |
| 英文描述： | Multi-channel High tae rate Programmable |
| 中文描述： | 多通道可編程率高泰 |
| 文件頁數(shù)： | 8/30頁 |
| 文件大?。?/td> | 339K |
| 代理商： | TXC102 |
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2.2 EEPROM Mode
Figure 2. Typical EEPROM Mode 50 Ohm Load Application Circuit
The TXC102 can operate from a single, SPI compatible EEPROM by simply reading the sequential codes
stored in memory. No external microcontroller is required. The codes are read out and processed as
command and data. In this special mode, four pins are configured as inputs with an internal pull-up
resistor. All that is needed are external key switches connected to GND to activate that key’s code
routine. When the key is pressed, the chip automatically begins executing code from a designated point
within the EEPROM. When not in use, the last command of the code execution should be a sleep
command so as to power down the device for maximum battery life. When the device is put into sleep
one of the following seven (7) events can cause the device to wake up:
Power-on Reset
Low pulse on Key 1
Low pulse on Key 2
Low pulse on Key 3
Low pulse on Key 4
Low supply voltage output warning
Wake-up timer timeout
For each wake-up event there is an internal address assigned as the starting point in EEPROM memory
to begin executing code. These are defined in TABLE 3 as follows:
TABLE 3.
Wake-up Event
Power up
Low Pulse on SW1
Low Pulse on SW2
Low Pulse on SW3
Low Pulse on SW4
LBD Warning
Wake-up Timer Timeout
EEPROM Address Entry
0000h
0080h
0100h
0180h
0200h
0280h
0300h
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