參數(shù)資料
型號(hào): TXB0108GXYR
廠商: Texas Instruments, Inc.
英文描述: 8-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO-DIRECTION SENSING AND 【15-kV ESD PROTECTION
中文描述: 8位雙向電壓電平轉(zhuǎn)換與汽車(chē)方向傳感及【15 - kV ESD保護(hù)
文件頁(yè)數(shù): 10/16頁(yè)
文件大?。?/td> 285K
代理商: TXB0108GXYR
www.ti.com
PRINCIPLES OF OPERATION
Applications
The TXB0108 can be used in level-translation applications for interfacing devices or systems operating at
different interface voltages with one another.
Architecture
The TXB0108 architecture (see
Figure 1
) does not require a direction-control signal to control the direction of
data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0108 can maintain a high or low,
but are designed to be weak, so that they can be overdriven by an external driver when data on the bus starts
flowing the opposite direction.
4k
4k
A
B
V
CCA
V
CCB
One
Shot
One
Shot
One
Shot
One
Shot
T1
T2
T3
T4
Input Driver Requirements
Typical I
IN
vs V
IN
characteristics of the TXB0108 are shown in
Figure 2
. For proper operation, the device driving
the data I/Os of the TXB0108 must have drive strength of at least
±
2 mA.
TXB0108
8-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR
WITH AUTO-DIRECTION SENSING AND
±
15-kV ESD PROTECTION
SCES643A–NOVEMBER 2006–REVISED JANUARY 2007
The output one shots detect rising or falling edges on the A or B ports. During a rising edge, the one shot turns
on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly,
during a falling edge, the one shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up
the high-to-low transition. The typical output impedance during output transition is 70
at V
CCO
= 1.2 V to 1.8 V,
50
at V
CCO
= 1.8 V to 3.3 V and 40
at V
CCO
= 3.3 V to 5 V.
Figure 1. Architecture of TXB0108 I/O Cell
10
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