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參數(shù)資料
| 型號： | TVV100 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射頻功率晶體管(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | TVV100 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CER
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 5.0 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
60
33
3.5
20
UNITS
V
V
V
V
---
R
BE
= 15
150
C
OB
V
CB
= 28 V
f = 1.0 MHz
---
60
---
pF
P
G
V
CE
= 28 V
P
OUT
= 100 W
I
C
= 2 X 100 mA f = 225 MHz
11
dB
NPN SILICON RF POWER TRANSISTOR
TVV100
DESCRIPTION:
The
ASI TVV100
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
16 A
V
CBO
65 V
V
CEO
33 V
V
EBO
3.5 V
P
DISS
150 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
0.8
O
C/W
PACKAGE STYLE .400 8L FLG
ORDER CODE: ASI10662
MINIMUM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.125 / 3.18
.390 / 9.91
.075 / 1.91
H
.645 / 16.38
.655 / 16.64
DIM
K
L
I
J
.895 / 22.73
.420 / 10.67
.120 / 3.05
.905 / 22.99
.430 / 10.92
.130 / 3.30
O
N
M
.395 / 10.03
.159 / 4.04
.405 / 10.29
.175 / 4.45
.003 / 0.08
.007 / 0.18
.280 / 7.11
.130 / 3.30
D
K
E
.125
F
G
.1925
J
I
H
N
LM
4 x .060 R
FULL R
A
B
C
O
.360 / 9.14
.030 / 0.76
.735 / 18.67
.765 / 19.43
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