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參數(shù)資料
| 型號： | TSTA7500 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 875nm 2-Pin TO-18 Bulk |
| 中文描述： | Infrared Emitters 30 Degree 180mW |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 132K |
| 代理商： | TSTA7500 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
www.vishay.com
256
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81046
Rev. 1.7, 04-Sep-08
TSTA7500
Vishay Semiconductors
DESCRIPTION
TSTA7500 is an infrared, 875 nm emitting diode in GaAlAs
technology in a hermetically sealed TO-18 package with flat
glass window.
FEATURES
Package type: leaded
Package form: TO-18
Dimensions (in mm):
4.7
Peak wavelength:
λ
p
= 875 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 30°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Lead
(Pb)-free
component
RoHS 2002/95/EC and WEEE 2002/96/EC
in
accordance
with
APPLICATIONS
Radiation source near infrared range
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
amb
= 25 °C, unless otherwise specified
94
8
400
PRODUCT SUMMARY
COMPONENT
TSTA7500
I
e
(mW/sr)
6
(deg)
± 30
λ
P
(nm)
875
t
r
(ns)
600
ORDERING INFORMATION
ORDERING CODE
TSTA7500
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TO-18
MOQ: 1000 pcs, 1000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
VALUE
5
100
200
2.5
180
500
100
- 55 to + 100
450
150
UNIT
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
t
p
/T = 0.5, t
p
≤
100 μs
t
p
≤
100 μs
Power dissipation
T
case
≤
25 °C
Junction temperature
Storage temperature range
Thermal resistance junction/ambient
Thermal resistance junction/case
leads not soldered
leads not soldered
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|---|---|
| TSTA7500_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs |
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