參數(shù)資料
型號(hào)： TSML1040
廠商： Vishay Intertechnology,Inc.
英文描述： Extented Power IR Emitting Diode in SMD Package
中文描述： Extented功率紅外發(fā)光二極管封裝的貼片
文件頁數(shù)： 2/10頁
文件大?。?/td> 479K
代理商： TSML1040
www.vishay.com
2
Document Number 81033
Rev. 6, 21-May-03
VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
φ
e
35
mW
TK
φ
e
λ
p
λ
TK
λ
p
t
r
t
f
- 0.6
%/K
±12
950
deg
nm
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
50
nm
0.2
nm/K
800
ns
Fall Time
800
ns
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
P
-
V
0
20
40
60
80
100
120
140
160
180
200
T
amb
- Ambient Temperature (
°
C )
16187
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
16188
I
F
100
90
80
70
60
50
40
30
20
10
0
T
amb
- Ambient Temperature (
°
C )
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
10
100
1000
10000
0.01
0.10
1.00
10.00
100.00
t
p
- Pulse Duration ( ms )
14335
I
F
t
p
/T = 0.01
0.05
0.2
0.5
1.0
0.1
0.02
V
F
- Forward Voltage ( V )
13600
10
1
10
0
10
2
10
3
10
4
t
p
= 100 s
t
p
/T = 0.001
μ
4
3
2
1
0
I
F
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