參數(shù)資料
型號(hào): TSML1000
廠商: Vishay Intertechnology,Inc.
英文描述: High-Power SMD IRED GaAlAs/GaAs
中文描述: 大功率貼片IRED /砷化鎵的GaAIAs
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 39K
代理商: TSML1000
TSML1000
Vishay Telefunken
2 (4)
Rev. 4, 31-Mar-00
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81033
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.0 A, t
p
= 100 s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
Min
Typ
1.35
2.6
–1.3
Max
1.6
3
Unit
V
V
mV/K
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
10
25
35
300
35
–0.6
±
12
940
50
0.2
800
800
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
p
Rise Time
Fall Time
e
TK
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
p
TK
p
t
r
t
f
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
1
2
3
V
F
– Forward Voltage ( V )
4
13600
10
1
10
0
10
2
10
3
10
4
I
F
t
p
= 100 s
t
p
/T = 0.001
Figure 1. Forward Current vs. Forward Voltage
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
F
100
94 7990 e
I
F
= 10 mA
Figure 2. Relative Forward Voltage vs.
Ambient Temperature
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