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參數(shù)資料
| 型號(hào)： | TSMF3710-GS18 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| 中文描述： | 高速紅外發(fā)光二極管，870納米，雙異質(zhì)的GaAIAs |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | TSMF3710-GS18 |
www.vishay.com
2
Document Number 81088
Rev. 1.3, 21-Feb-07
TSMF3710
Vishay Semiconductors
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
Min
Typ.
1.5
Max
1.8
Unit
V
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
2.3
V
Temp. coefficient of V
F
Reverse current
-2.1
mV/K
10
μA
Junction capacitance
125
pF
Radiant intensity
10
22
mW/sr
100
mW/sr
Radiant power
Temp. coefficient of
φ
e
Angle of half intensity
Peak wavelength
40
mW
-0.35
%/K
±60
870
deg
nm
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Spectral bandwidth
Temp. coefficient of
λ
p
Rise time
40
nm
0.25
nm/K
30
ns
Fall time
30
ns
Virtual source size
0.44
mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
14
8
46
P
w
e
W
)
V
R
thJA
T
am
b
- Am
b
ient Temperat
u
re (°C)
0
20
40
60
8
0
100
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
125
14
8
47
R
thJA
I
w
a
u
r
F
T
am
b
- Am
b
ient Temperat
u
re (°C)
0
20
40
60
8
0
100
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