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參數(shù)資料
| 型號： | TSMF1040 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed IR Emitting Diode in SMD Package |
| 中文描述： | 高速紅外發(fā)光二極管封裝的貼片 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 491K |
| 代理商： | TSMF1040 |
www.vishay.com
2
Document Number 81061
Rev. 6, 21-May-03
VISHAY
TSMF1000/1020/1030/1040
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Radiant Intensity
I
F
= 20 mA
I
F
= 100 mA, t
p
= 100
μ
s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
I
e
I
e
φ
e
2.5
5
mW/sr
25
mW/sr
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
35
mW
TK
φ
e
λ
p
λ
TK
λ
p
t
r
t
f
- 0.6
%/K
± 17
870
deg
nm
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
40
nm
0.2
nm/K
30
ns
Fall Time
30
ns
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
P
-
V
0
20
40
60
80
100
120
140
160
180
200
T
amb
- Ambient Temperature (
°
C )
16187
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
16188
I
F
100
90
80
70
60
50
40
30
20
10
0
T
amb
- Ambient Temperature (
°
C )
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
0.01
0.1
1
10
1
10
100
1000
10000
t
p
- Pulse Length ( ms )
100
95 9985
I
-
F
DC
t
p
/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
amb
< 60
°
C
V
F
- Forward Voltage ( V )
94 8880
10
1
10
0
10
2
10
3
10
4
I
-
F
4
3
2
1
0
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