
TSL253, TSL254
PRECISION HIGH-SPEED LIGHT-TO-VOLTAGE CONVERTER
SOES036 – AUGUST 1997
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Monolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
D Converts Light Intensity to Output Voltage
D High Irradiance Responsivity ...Typically
60 mV/(
W/cm2) at λp = 880 nm (TSL253)
D High Bandwidth
D Compact 3-Leaded Clear Plastic Package
D Low Dark (Offset) Voltage . . . 10 mV Max
At 25
°C, VDD = 5 V
D Single-Supply Operation
D Wide Supply-Voltage Range . . . 2.7 V to
5.5 V
D Low Supply Current . . . 600 A Typical at
VDD = 5 V
D Advanced LinCMOS Technology
description
The TSL253 and TSL254 are light-to-voltage optical converters, each combining a 1-mm-square photodiode
and a transimpedance amplifier (feedback resistor = 16 M
, and 1 M respectively) on a single monolithic IC.
The output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices
utilize Texas Instruments silicon-gate LinCMOS technology, which provides improved amplifier offset-voltage
stability and low power consumption.
functional block diagram
Voltage
Output
+
–
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1)
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO
±10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25
°C
5 s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA
–25
°C to 85°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–25
°C to 85°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
240
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltages are with respect to GND.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
3
2
1
OUT
VDD
GND
SR PACKAGE
(TOP VIEW)
LinCMOS is a trademark of Texas Instruments Incorporated.