參數(shù)資料
型號： TSIL6400
英文描述： GaAs/GaAlAs IR Emitting Diodes in ┆ 5 mm Package
中文描述： 砷化鎵/紅外發(fā)光二極管的GaAIAs 5毫米封裝在┆
文件頁數(shù)： 1/5頁
文件大?。?/td> 114K
代理商： TSIL6400
TSIL6400
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
1 (5)
GaAs/GaAlAs IR Emitting Diodes in 5 mm Package
Description
TSIL6400 is a high efficiency infrared emitting diode in
GaAlAs on GaAs technology, molded in clear, bluegrey
tinted plastic packages.
In comparison with the standard GaAs on GaAs technol-
ogy these emitters achieve about 70 % radiant power
improvement at a similar wavelength.
The forward voltages at low current and at high pulse cur-
rent roughly correspond to the low values of the standard
technology. Therefore these emitters are ideally suitable
as high performance replacements of standard emitters.
Features
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T–1 ( 5 mm) package
Angle of half intensity
=
±
17
Peak wavelength
p
= 925 nm
High reliability
Good spectral matching to Si photodetectors
94 8390
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
C
C
C
C
K/W
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
p
/T=0.5, t
p
=100 s
t
p
=100 s
t
5sec, 2 mm from case
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