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參數(shù)資料
| 型號： | TSHA6500 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | 5 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | TSHA6500 |
VISHAY
TSHA650.
Document Number 81022
Rev. 1.5, 11-May-04
Vishay Semiconductors
www.vishay.com
1
94 8389
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA650. series are high efficiency infrared
emitting diodes in GaAlAs on GaAlAs technology,
molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these high intensity emitters feature about
70 % radiant power improvement.
In contrast to the TSHA550. series lead stand-offs are
omitted.
Features
Extra high radiant power
Suitable for high pulse current operation
Standard T-1 (
5 mm) package
Leads formed without stand-off
Angle of half intensity
= ± 24°
Peak wavelength
λp = 875 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission sys-
tems with high power and comfortable radiation angle
requirements in combination with PIN photodiodes or
phototransistors.
Because of the reduced radiance absorption in glass
at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission
range between emitter and detector.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
5V
Forward current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 sIFM
200
mA
Surge Forward Current
tp = 100 sIFSM
2.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 55 to + 100
°C
Storage Temperature Range
Tstg
- 55 to + 100
°C
Soldering Temperature
t
≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
350
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHA6500_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, 875 nm, GaAlAs |
| TSHA6501 | 功能描述:紅外發(fā)射源 5V 23mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHA6502 | 功能描述:紅外發(fā)射源 5V 24mW 875nm 24 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHA6503 | 功能描述:紅外發(fā)射源 5V 25mW 875nm 24 deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHC-101-J-06-190-T | 制造商:Major League Electronics 功能描述: |
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