參數(shù)資料
型號(hào)： TSFF5210
廠商： Vishay Intertechnology,Inc.
英文描述： High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
中文描述： 高速紅外發(fā)光二極管，870納米，雙異質(zhì)的GaAIAs
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 119K
代理商： TSFF5210
www.vishay.com
2
Document Number 81090
Rev. 1.5, 28-Nov-06
TSFF5210
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Radiant intensity
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
Min
Typ.
1.5
Max
1.8
Unit
V
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
2.3
3.0
V
Temp. coefficient of V
F
Reverse current
- 2.1
mV/K
10
μA
Junction capacitance
125
pF
Test condition
Symbol
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
f
c
Min
90
Typ.
180
Max
450
Unit
mW/sr
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
1800
mW/sr
Radiant power
Temp. coefficient of
φ
e
Angle of half intensity
Peak wavelength
50
mW
- 0.35
%/K
± 10
870
deg
nm
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
Spectral bandwidth
Temp. coefficient of
λ
p
Rise time
40
nm
0.25
nm/K
15
ns
Fall time
15
ns
Cut-off frequency
23
MHz
Virtual source diameter
3.7
mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
300
10
20 30 40 50 60 70
8
0 90
T
am
b
- Am
b
ient Temperat
u
re (°C)
0
100
16647
P
V
w
e
W
)
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
125
150
175
200
10
20 30 40 50 60 70
8
0 90
T
am
b
- Am
b
ient Temperat
u
re (°C)
0
100
16964
I
F
w
a
u
r
R
thJA
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