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參數(shù)資料
| 型號： | TSDF1250R |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 151K |
| 代理商： | TSDF1250R |
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 5, 08-Jul-99
3 (6)
Document Number 85067
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
– Ambient Temperature (
°
C )
96 12159
P
t
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
4
8
12
16
20
0
10
20
30
40
50
I
C
– Collector Current ( mA )
16130
f
T
V
CE
= 5V
V
CE
= 2V
f
= 1GHz
Figure 2. Transition Frequency vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
CB
– Collector Base Voltage ( V )
16131
C
c
f= 1MHz
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
I
C
– Collector Current ( mA )
16132
F
V
= 5V
f = 2GHz
Z
S
= 50
Figure 4. Noise Figure vs. Collector Current
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