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參數(shù)資料
| 型號： | TSDF1220 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 81K |
| 代理商： | TSDF1220 |
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (6)
Rev. 6, 30-Jun-00
Document Number 85066
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Symbol
R
thJA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
2
V
CE
= 12 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
6
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 5 V, I
C
= 20 mA
0.1
100
0.5
150
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min
Typ
12
0.3
0.35
0.5
1.2
Max
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
V
CB
= 1 V, f = 1 MHz
V
CE
= 1 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 3 mA,
Z
S
= Z
Sopt
, Z
L
= 50 , f = 2 GHz
V
CE
= 5 V, I
C
= 20 mA,
Z
S
= Z
Sopt
, Z
L
= 50 , f = 2 GHz
V
CE
= 5 V, I
C
= 20 mA,
Z
0
= 50 , f = 2 GHz
V
CE
= 5 V, I
C
= 20 mA, f = 2 GHz
Power gain
G
pe
14
dB
Transducer gain
S
21e
2
12.5
dB
Third order intercept point at
output
IP
3
22
dBm
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