參數(shù)資料
型號: TSDF1205
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Planar RF Transistor
中文描述: 硅NPN平面射頻晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 81K
代理商: TSDF1205
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (6)
Rev. 5, 30-Jun-00
Document Number 85065
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
2
V
CE
= 12 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
4
I
C
= 5 mA, I
B
= 0.5 mA
V
CE
= 2 V, I
C
= 2 mA
0.1
120
0.5
250
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min
Typ
12
0.2
0.35
0.15
1.3
Max
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 2 V, I
C
= 5 mA, f = 1 GHz
V
CB
= 1 V, f = 1 MHz
V
CE
= 1 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 2 V, I
C
= 2 mA, Z
S
= Z
Sopt
,
Z
L
= 50 , f = 2 GHz
V
CE
= 2 V, I
C
= 2 mA,
f = 2 GHz (@F
opt
)
V
CE
= 2 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
Z
L
= 50 f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, Z
0
= 50 ,
f = 2 GHz
Power gain
G
pe
13
dB
G
pe
11.5
dB
Transducer gain
S
21e
2
12.5
dB
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