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參數(shù)資料
| 型號： | TSDF02424X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual - MOSMIC?? two AGC Amplifiers for TV?Tuner Prestage with 5 V Supply Voltage |
| 中文描述： | 雙- MOSMIC？？ 2 AGC放大器的電視？調諧前置5 V電源電壓 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | TSDF02424X |
TSDF02424X/TSDF02424XR
Vishay Semiconductors
www.vishay.com
2 (4)
Rev. 1, 12–Nov–01
Document Number 85088
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Gate 1/Gate 2 - source voltage
Total power dissipation
T
amb
60
°
C
Channel temperature
Storage temperature range
Symbol
V
DS
I
D
±
I
G1/G2SM
+V
G1
/
±
V
G2SM
-V
G1SM
P
tot
T
Ch
T
stg
Value
8
25
10
6
1.5
200
150
Unit
V
mA
mA
V
V
mW
°
C
°
C
Maximum Thermal Resistance
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
Test Conditions
Symbol
V
Min.
12
Typ.
Max.
Unit
V
I
D
= 10
μ
A, V
G1S
= V
G2S
= 0
+I
G1S
= 10 mA, V
G2S
= V
DS
= 0
+V
(BR)G1SS
7
10
V
±
I
G2S
= 10 mA, V
G2S
= V
DS
= 0
±
V
(BR)G2SS
7
10
V
+V
G1S
= 5 V, V
G2S
= V
= 0
+I
G1SS
20
nA
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
±
I
G2SS
20
nA
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
I
DSO
8
13
18
mA
V
DS
= 5 V, V
G2S
= 4, I
D
= 20
μ
A
V
G1S(OFF)
0.5
1.3
V
V
DS
= V
RG1
= 5 V, R
G1
= 56 k , I
D
= 20
μ
A
V
G2S(OFF)
0.8
1.0
1.4
V
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 56 k , typical value of I
DSO
will raise and improved intermodulation behavior
will be performed.
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