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參數(shù)資料
| 型號： | TSC87251G2D-L16CED |
| 廠商： | TEMIC SEMICONDUCTORS |
| 元件分類： | 8位微控制器 |
| 英文描述： | 8/16-bit Microcontroller with Serial Communication Interfaces |
| 中文描述： | 16位產(chǎn)品微控制器的串行通信接口 |
| 文件頁數(shù)： | 30/63頁 |
| 文件大?。?/td> | 878K |
| 代理商： | TSC87251G2D-L16CED |
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Rev. A - May 7, 1999
30
TSC80251G2D
8.3 Signature Bytes
The TSC80251G2D derivatives contain factory-programmed Signature Bytes. These bytes are located in non-volatile
memory outside the memory address space at 30h, 31h, 60h and 61h. To read the Signature Bytes, perform the
procedure described in section 8.5, using the verify signature mode (see Table 39). Signature byte values are listed
in Table 37.
Table 37. Signature Bytes (Electronic ID)
8.4 Programming Algorithm
Figure 9 shows the hardware setup needed to program the TSC87251G2D EPROM/OTPROM areas:
G
The chip has to be put under reset and maintained in this state until the completion of the programming sequence.
G
PSEN# and the other control signals (ALE and Port 0) have to be set to a high level.
G
Then PSEN# has to be to forced to a low level after two clock cycles or more and it has to be maintained in
this state until the completion of the programming sequence (see below).
G
The voltage on the EA# pin must be set to V
DD
.
G
The programming mode is selected according to the code applied on Port 0 (see Table 38). It has to be applied
until the completion of this programming operation.
G
The programming address is applied on Ports 1 and 3 which are respectively the Most Significant Byte (MSB)
and the Least Significant Byte (LSB) of the address.
G
The programming data are applied on Port 2.
G
The EPROM Programming is done by raising the voltage on the EA# pin to V
PP
, then by generating a low
level pulse on ALE/PROG# pin.
G
The voltage on the EA# pin must be lowered to V
DD
before completing the programming operation.
G
It is possible to alternate programming and verifying operation (See Paragraph 8.5). Please make sure the
voltage on the EA# pin has actually been lowered to V
DD
before performing the verifying operation.
G
PSEN# and the other control signals have to be released to complete a sequence of programming operations
or a sequence of programming and verifying operations.
Signature Address
Signature Data
Vendor
T
EMIC
30h
58h
Architecture
C251
31h
40h
Memory
32 Kbytes EPROM or OTPROM
60h
F7h
32 Kbytes MaskROM or ROMless
77h
Revision
TSC80251G2D derivative
61h
FDh
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| TSC87251G2D-L16CER | 功能描述:IC MCU 8BIT 32K OTP 16MHZ 44VQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:8x251 標準包裝:1,500 系列:AVR® ATtiny 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C，LIN，SPI，UART/USART，USI 外圍設備:欠壓檢測/復位，POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):16 程序存儲器容量:8KB（4K x 16） 程序存儲器類型:閃存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 11x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:帶卷 (TR) |
| TSC873CT A3 | 功能描述:兩極晶體管 - BJT NPN Silicon Planar Med Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TSC873CW RPG | 功能描述:兩極晶體管 - BJT NPN Silicon Planar Med Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TSC888AILT | 功能描述:電流靈敏放大器 Sense Amplifier 20 Gain RoHS:否 制造商:Texas Instruments 通道數(shù)量: 共模抑制比（最小值）:110 dB 輸入補償電壓:80 uV 電源電壓-最大:5.5 V 電源電壓-最小:2.7 V 電源電流:350 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-16 封裝:Reel |
| TSC888BILT | 功能描述:電流靈敏放大器 Sense Amplifier 50 Gain RoHS:否 制造商:Texas Instruments 通道數(shù)量: 共模抑制比（最小值）:110 dB 輸入補償電壓:80 uV 電源電壓-最大:5.5 V 電源電壓-最小:2.7 V 電源電流:350 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:VQFN-16 封裝:Reel |
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