參數(shù)資料
型號(hào)： TSAL5300-GSZ
廠商： Vishay Intertechnology,Inc.
英文描述： High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
中文描述： 大功率紅外發(fā)光二極管，950納米，發(fā)動(dòng)器/砷化鎵
文件頁數(shù)： 3/8頁
文件大?。?/td> 298K
代理商： TSAL5300-GSZ
VISHAY
TSAL5300
Vishay Semiconductors
Document Number 81008
Rev. 1.7, 08-Mar-05
www.vishay.com
3
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Forward Voltage vs. Ambient Temperature
t
p
– Pulse Duration ( ms )
96 11987
10
0
10
1
10
1
10
–1
10
–1
10
0
10
2
10
–2
I
F
t
p
/T=0.01
I
FSM
= 1 A ( Single Pulse )
0.05
0.1
0.5
1.0
V
F
- Forward Voltage ( V )
13600
10
1
10
0
10
2
10
3
10
4
t
p
= 100 s
t
p
/T = 0.001
μ
4
3
2
1
0
I
F
0.7
0.8
0.9
1.0
1.1
1.2
V
-
F
94 7990
I
F
= 10 mA
T
amb
- Ambient Temperature (
°
C )
100
80
60
40
20
0
Figure 6. Radiant Intensity vs. Forward Current
Figure 7. Radiant Power vs. Forward Current
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
14327
10
3
10
1
I
F
– Forward Current ( mA )
10
2
10
4
10
0
0.1
1
10
1000
100
I
e
-
e
Φ
I
F
- Forward Current ( mA )
13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
-10
10
T
amb
- Ambient Temperature (
°
C )
50
0
100
0
0.4
0.8
1.2
1.6
I
;
e
e
Φ
140
94 7993
I
F
= 20 mA
相關(guān)PDF資料
PDF描述
TSAL5300 GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSAL5300-MSZ 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6100 功能描述:紅外發(fā)射源 10 Degree 40mW RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
TSAL6100 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode
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TSAL6100_09 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
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