參數(shù)資料
型號(hào)： TSAL5300-FSZ
廠(chǎng)商： Vishay Intertechnology,Inc.
英文描述： High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
中文描述： 大功率紅外發(fā)光二極管，950納米，發(fā)動(dòng)器/砷化鎵
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 298K
代理商： TSAL5300-FSZ
www.vishay.com
2
Document Number 81008
Rev. 1.7, 08-Mar-05
VISHAY
TSAL5300
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Radiant Intensity
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
Min
Typ.
1.35
Max
1.6
Unit
V
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 100 mA
V
R
= 5 V
V
R
= 0, f = 1 MHz, E = 0
2.6
3
V
Temp. Coefficient of V
F
Reverse Current
- 1.875
mV/K
μ
A
pF
10
Junction capacitance
25
Test condition
Symbol
I
e
I
e
φ
e
TK
φ
e
λ
p
λ
TK
λ
p
t
r
t
r
t
f
t
f
Min
30
Typ.
45
Max
150
Unit
mW/sr
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
260
350
mW/sr
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
35
mW
- 0.6
%/K
± 22
940
deg
nm
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1 A
I
F
= 100 mA
I
F
= 1 A
method: 63 % encircled energy
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
50
nm
0.2
nm/K
800
ns
500
ns
Fall Time
800
ns
500
ns
Virtual Source Diameter
2.3
mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
P
-
V
T
amb
- Ambient Temperature (
°
C )
94 7957
R
thJA
20
40
60
80
100
0
Figure 2. Forward Current vs. Ambient Temperature
0
20
40
60
80
0
50
100
150
200
250
I
F
T
amb
– Ambient Temperature (°C )
100
96 11986
R
thJA
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