參數(shù)資料
型號(hào)： TSAL4400
廠商： Vishay Intertechnology,Inc.
英文描述： GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
中文描述： 砷化鎵/紅外發(fā)光二極管的GaAIAs呢？3毫米（T.1）包裝
文件頁數(shù)： 2/5頁
文件大?。?/td> 81K
代理商： TSAL4400
TSAL4400
Vishay Telefunken
2 (5)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81006
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.0 A, t
p
= 100 s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
Min
Typ
1.35
2.6
–1.3
Max
1.6
3
Unit
V
V
mV/K
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
10
25
30
240
35
–0.6
±
25
940
50
0.2
800
800
2.8
16
135
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
p
Rise Time
Fall Time
Virtual Source Diameter
e
TK
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
method: 63% encircled
energy
p
TK
p
t
r
t
f
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
P
V
100
94 7957 e
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
I
F
100
96 11986
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSAL4400 制造商:Vishay Intertechnologies 功能描述:IR EMITTER 3MM 940NM
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TSAL4400AS12 制造商:Vishay Semiconductors 功能描述:
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