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參數(shù)資料
| 型號(hào)： | TPV8100 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.438 X 0.450 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 24K |
| 代理商： | TPV8100 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CER
I
C
= 10 mA
BV
CBO
I
C
= 20 mA
BV
EBO
I
E
= 10 mA
I
CER
V
CE
= 28 V
h
FE
V
CE
= 10 V I
C
= 2.0 A
TEST CONDITIONS
R
BE
= 75
MINIMUM TYPICAL MAXIMUM
30
65
4.0
30
UNITS
V
V
V
mA
---
R
BE
= 75
10
120
G
p
η
V
CE
= 28 V
V
CE
= 28 V
V
CE
= 28 V
1.0 dB
COMPRESSION
(ref = 25 W)
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
P
out
V
CE
= 28 V
I
cq
= 2X50 mA
P
out
V
CE
= 32 V
I
cq
= 2X25 mA
I
cq
= 2X50 mA
I
cq
= 2X50 mA
I
cq
= 2X50 mA
f = 860 MHz
f = 860 MHz
f = 860 MHz
8.5
55
dB
%
P
out
100
W
f = 860 MHz
f = 860 MHz
125
150
W
W
NPN SILICON RF POWER TRANSISTOR
TPV8100
DESCRIPTION:
The
ASI TPV8100
is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
Internal Input, Output Matching
Common Emitter Configuration
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
12 A
V
CER
40 V R
BE
= 10
215 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.8
O
C/W
P
DISS
T
J
T
STG
θ
JC
PACKAGE STYLE .438X.450 4LFL
1 = COLLECTOR #1 2 = COLLECTOR
#2
3 = BASE #1 4 = BASE #2
5 = EMITTER CASE (COMMON)
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