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參數(shù)資料
| 型號(hào)： | TPV5051 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | BMA-2, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | TPV5051 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 60 mA
BV
CBO
I
C
= 20 mA
BV
EBO
I
E
= 6.0 mA
BV
CER
I
C
= 10 mA R
BE
= 50
I
CEO
V
CE
= 28 V
h
FE
V
CE
= 20 V I
C
= 800 mA
C
ob
V
CB
= 28 V
f = 1.0 MHz
(EACH SIDE)
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
30
V
45
V
4.0
V
40
V
10
mA
10
---
40
pF
P
G
η
C
V
CE
= 28 V
f = 860 MHz
P
out
= 50 W Iq = 2X50 mA
6.5
45
dB
%
NPN SILICON RF POWER TRANSISTOR
TPV5051
DESCRIPTION:
The
TPV5051
is Designed for AB
Push Pull, Common Emitter from
470 to 860 MHz Applications.
FEATURES:
Gold Metalization
Diffused Ballast Resistor
MAXIMUM RATINGS
I
C
9.0 A
V
CEO
30 V
V
CBO
45 V
P
DISS
97 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.8 °C/W
PACKAGE STYLE BMA-2
1 = BASE 2 = BASE 3 = COLLECTOR
4 = COLLECTOR 5 = EMITTER
MILLIMETER
S
MIN
20.07
6.35
4.20
1.40
1.40
1.27
1.34
0.08
4.83
6.56
3.18
14.03
INCHES
DIM
A
B
C
D
E
G
H
J
K
N
Q
U
MAX
20.57
6.85
5.02
1.65
1.65
1.77
2.43
0.12
5.33
6.80
3.42
14.52
MIN
0.790
0.250
0.165
0.055
0.055
0.060
0.076
0.003
0.190
0.258
0.125
0.552
MAX
0.810
0.270
0.198
0.065
0.065
0.070
0.096
0.005
0.210
0.268
0.135
0.572
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPV5051-1 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| TPV5055B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | FO-91VAR |
| TPV590 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| TPV591 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| TPV593 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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